ds30012 rev. b-2 1 of 2 BAV201-bav203 features BAV201 - bav203 surface mount switching diode characteristic symbol BAV201 bav202 bav203 unit repetitive peak reverse voltage v rrm 120 200 250 v working peak reverse voltage dc blocking voltage v rwm v r 100 150 200 v rms reverse voltage v r(rms) 71 106 141 v forward continuous current (note 1) i fm 250 ma average rectified output current (note 1) i o 125 ma non-repetitive peak forward surge current @ t < 1.0s i fsm 1.0 a power dissipation p d 500 mw thermal resistance junction to ambient air (note 1) r q ja 300 k/w operating and storage temperature range t j ,t stg -65 to +175 c maximum ratings @ t a = 25 c unless otherwise specified notes: 1. valid provided that electrodes are kept at ambient temperature. characteristic symbol min max unit test condition maximum forward voltage v fm ? 1.0 v i f = 100ma maximum peak reverse current @ rated dc blocking voltage i rm ? 100 15 na m a t a = 25 c t a = 100 c junction capacitance c j ? 1.5 pf v r = 0, f = 1.0mhz reverse recovery time t rr ? 50 ns i f = i r = 30ma, i rr = 0.1 x i r ,r l = 100 w electrical characteristics @ t a = 25 c unless otherwise specified features fast switching speed surface mount package ideally suited for automatic insertion for general purpose switching applications high conductance outline similar to jedec 213aa case: quadromelf, glass terminals: solderable per mil-std-202, method 208 polarity: cathode band marking: cathode band only weight: 0.034 grams (approx.) mechanical data a d c b quadromelf dim min max a 3.3 3.7 b 1.4 1.6 c 1.7 ? typical d 0.3 typical all dimensions in mm power semiconductor
ds30012 rev. b-2 2 of 2 BAV201-bav203 1 10 100 0.1 0.01 0 100 200 i , leakage current (na) r t , junction temperature ( c) fig. 2 leakage current vs junction temperature j 10 1.0 100 1000 0.1 0.01 012 i , instantaneous for ward current (ma) f v , instantaneous forward voltage (v) fig. 1 forward characteristics f t=25c j
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